Improved photoluminescence of InGaAsN–„In...GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing

The metalorganic chemical vapor deposition of a highly strained InGaAsN quantum-well ~QW! surrounded by ~In!GaAsP direct barrier layers is investigated. We found that growth pause annealing with AsH3 , performed immediately before and after the growth of the QW, significantly improves the optical quality of InGaAsN QW with ~In!GaAsP direct barriers. The utilization of larger band gap barrier materials, such as InGaAsP or GaAsP, will potentially lead to reduced carrier leakage from the QW laser structures. © 2003 American Institute of Physics. @DOI: 10.1063/1.1572470#